更改

<math>m_\text{em} = \int \frac{1}{2} E^2 \, dV = \int_{r_e}^\infty \frac{1}{2} \left( \frac{q}{4\pi r^2} \right)^2 4\pi r^2 \, dr = \frac{q^2}{8\pi r_e},</math>

<math>m_\text{em} = \int \frac{1}{2} E^2 \, dV = \int_{r_e}^\infty \frac{1}{2} \left( \frac{q}{4\pi r^2} \right)^2 4\pi r^2 \, dr = \frac{q^2}{8\pi r_e},</math>

m_\text{em} = \int \frac{1}{2} E^2 \, dV = \int_{r_e}^\infty \frac{1}{2} \left( \frac{q}{4\pi r^2} \right)^2 4\pi r^2 \, dr = \frac{q^2}{8\pi r_e},  

<math>m_\text{em} = \int \frac{1}{2} E^2 \, dV = \int_{r_e}^\infty \frac{1}{2} \left( \frac{q}{4\pi r^2} \right)^2 4\pi r^2 \, dr = \frac{q^2}{8\pi r_e},</math>

<math>r_e = \frac{e^2}{4\pi\varepsilon_0 m_e c^2} = \alpha \frac{\hbar}{m_e c} \approx 2.8 \times 10^{-15}~\text{m},</math>

<math>r_e = \frac{e^2}{4\pi\varepsilon_0 m_e c^2} = \alpha \frac{\hbar}{m_e c} \approx 2.8 \times 10^{-15}~\text{m},</math>

4 pi varepsilon 0 m e c ^ 2} = alpha frac { hbar }{ m e c }大约2.8乘以10 ^ {-15} ~ text { m } ，</math >  

<math>r_e = \frac{e^2}{4\pi\varepsilon_0 m_e c^2} = \alpha \frac{\hbar}{m_e c} \approx 2.8 \times 10^{-15}~\text{m},</math>

where <math>\alpha \approx 1/137</math> is the fine-structure constant, and <math>\hbar/(m_e c)</math> is the Compton wavelength of the electron.

where <math>\alpha \approx 1/137</math> is the fine-structure constant, and <math>\hbar/(m_e c)</math> is the Compton wavelength of the electron.

其中 < math > alpha 大约1/137 </math > 是精细结构常数，< math > hbar/(m _ e c) </math > 是电子的康普顿波长。

其中 <math>\alpha \approx 1/137</math> 是精细结构常数，<math>\hbar/(m_e c)</math> 是电子的康普顿波长。