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→神经记忆电阻系统
==Neuromemristive systems==
==Neuromemristive systems==
==神经记忆电阻系统==
==神经记忆电阻系统==
Neuromemristive systems are a subclass of neuromorphic computing systems that focus on the use of [[memristors]] to implement [[neuroplasticity]]. While neuromorphic engineering focuses on mimicking biological behavior, neuromemristive systems focus on abstraction.<ref>{{Cite web|url=https://digitalops.sandia.gov/Mediasite/Play/a10cf6ceb55d47608bb8326dd00e46611d|title=002.08 N.I.C.E. Workshop 2014: Towards Intelligent Computing with Neuromemristive Circuits and Systems - Feb. 2014|website=digitalops.sandia.gov|access-date=2019-08-26}}</ref> For example, a neuromemristive system may replace the details of a [[Cerebral cortex|cortical]] microcircuit's behavior with an abstract neural network model.<ref>C. Merkel and D. Kudithipudi, "Neuromemristive extreme learning machines for pattern classification," ISVLSI, 2014.</ref>
Neuromemristive systems are a subclass of neuromorphic computing systems that focus on the use of [[memristors]] to implement [[neuroplasticity]]. While neuromorphic engineering focuses on mimicking biological behavior, neuromemristive systems focus on abstraction.<ref name=":33">{{Cite web|url=https://digitalops.sandia.gov/Mediasite/Play/a10cf6ceb55d47608bb8326dd00e46611d|title=002.08 N.I.C.E. Workshop 2014: Towards Intelligent Computing with Neuromemristive Circuits and Systems - Feb. 2014|website=digitalops.sandia.gov|access-date=2019-08-26}}</ref> For example, a neuromemristive system may replace the details of a [[Cerebral cortex|cortical]] microcircuit's behavior with an abstract neural network model.<ref name=":34">C. Merkel and D. Kudithipudi, "Neuromemristive extreme learning machines for pattern classification," ISVLSI, 2014.</ref>
神经记忆电阻系统是神经形态计算系统的一个亚类，主要研究利用'''<font color="ff8000">记忆电阻器Memristors</font>'''实现'''<font color="ff8000">神经可塑性Neuroplasticity</font>'''。神经形态工程的重点是模拟生物行为，而神经记忆电阻系统的重点是提取。<ref name=":33" />举个例子，一个神经记忆系统可能用抽象的神经网络模型替代'''<font color="ff8000">皮层Cortical</font>'''微电路的行为细节。<ref name=":34" />
There exist several neuron inspired threshold logic functions<ref name="Maan 1–13" /> implemented with memristors that have applications in high level [[pattern recognition]] applications. Some of the applications reported recently include [[speech recognition]],<ref name=":35">{{Cite journal|title = Memristor pattern recogniser: isolated speech word recognition|journal = Electronics Letters|pages = 1370–1372|volume = 51|issue = 17|doi = 10.1049/el.2015.1428|first1 = A.K.|last1 = Maan|first2 = A.P.|last2 = James|first3 = S.|last3 = Dimitrijev|year = 2015|bibcode = 2015ElL....51.1370M|hdl = 10072/140989|s2cid = 61454815|url = https://semanticscholar.org/paper/48d3ab11ec6e213b62f11eedcfb7b7febb058674|hdl-access = free}}</ref> [[face recognition]]<ref name=":36">{{Cite journal|title = Memristive Threshold Logic Face Recognition|journal = Procedia Computer Science|date = 2014-01-01|pages = 98–103|volume = 41|series = 5th Annual International Conference on Biologically Inspired Cognitive Architectures, 2014 BICA|doi = 10.1016/j.procs.2014.11.090|first1 = Akshay Kumar|last1 = Maan|first2 = Dinesh S.|last2 = Kumar|first3 = Alex Pappachen|last3 = James|doi-access = free}}</ref> and [[object recognition]].<ref name=":37">{{Cite journal|title = Memristive Threshold Logic Circuit Design of Fast Moving Object Detection|journal = IEEE Transactions on Very Large Scale Integration (VLSI) Systems|date = 2015-10-01|issn = 1063-8210|pages = 2337–2341|volume = 23|issue = 10|doi = 10.1109/TVLSI.2014.2359801|first1 = A.K.|last1 = Maan|first2 = D.S.|last2 = Kumar|first3 = S.|last3 = Sugathan|first4 = A.P.|last4 = James|arxiv = 1410.1267|s2cid = 9647290}}</ref> They also find applications in replacing conventional digital logic gates.<ref name=":38">{{Cite journal|title = Resistive Threshold Logic|journal = IEEE Transactions on Very Large Scale Integration (VLSI) Systems|date = 2014-01-01|issn = 1063-8210|pages = 190–195|volume = 22|issue = 1|doi = 10.1109/TVLSI.2012.2232946|first1 = A.P.|last1 = James|first2 = L.R.V.J.|last2 = Francis|first3 = D.S.|last3 = Kumar|arxiv = 1308.0090|s2cid = 7357110}}</ref><ref name=":39">{{Cite journal|title = Threshold Logic Computing: Memristive-CMOS Circuits for Fast Fourier Transform and Vedic Multiplication|journal = IEEE Transactions on Very Large Scale Integration (VLSI) Systems|date = 2015-11-01|issn = 1063-8210|pages = 2690–2694|volume = 23|issue = 11|doi = 10.1109/TVLSI.2014.2371857|first1 = A.P.|last1 = James|first2 = D.S.|last2 = Kumar|first3 = A.|last3 = Ajayan|arxiv = 1411.5255|s2cid = 6076956}}</ref>
受神经元启发、使用记忆电阻器实现的阈值逻辑函数<ref name="Maan 1–13" />在高级'''<font color="#ff8000">模式识别Pattern recognition</font>'''中有着广泛的应用，最近报道中其应用包括'''<font color="#ff8000">语音识别Speech recognition<ref name=":35" /></font>'''、'''<font color="#ff8000">人脸识别Face recognition<ref name=":36" /></font>'''和'''<font color="#ff8000">物体识别Object recognition<ref name=":37" /></font>'''。阈值逻辑函数还可以用来取代传统的数字逻辑门。<ref name=":38" /><ref name=":39" />
For ideal passive memristive circuits there is an exact equation (Caravelli-Traversa-[[Di Ventra]] equation) for the internal memory of the circuit:<ref name=":40">{{cite journal |last=Caravelli |display-authors=etal|arxiv=1608.08651 |title=The complex dynamics of memristive circuits: analytical results and universal slow relaxation |year=2017 |doi=10.1103/PhysRevE.95.022140 |pmid= 28297937 |volume=95 |issue= 2 |pages= 022140 |journal=Physical Review E|bibcode=2017PhRvE..95b2140C |s2cid=6758362}}</ref>
对于理想的无源记忆电路，电路的内部记忆可以用精确的方程(Caravelli-Traversa-Di Ventra方程) 来描述:<ref name=":40" />
:<math> \frac{d}{dt} \vec{W} = \alpha \vec{W}-\frac{1}{\beta} (I+\xi \Omega W)^{-1} \Omega \vec S </math>
:<math> \frac{d}{dt} \vec{W} = \alpha \vec{W}-\frac{1}{\beta} (I+\xi \Omega W)^{-1} \Omega \vec S </math>
:\frac{d}{dt} \vec{W} = \alpha \vec{W}-\frac{1}{\beta} (I+\xi \Omega W)^{-1} \Omega \vec S
:\frac{d}{dt} \vec{W} = \alpha \vec{W}-\frac{1}{\beta} (I+\xi \Omega W)^{-1} \Omega \vec S
as a function of the properties of the physical memristive network and the external sources. In the equation above, <math>\alpha</math> is the "forgetting" time scale constant, <math> \xi=r-1</math> and <math>r=\frac{R_\text{off}}{R_\text{on}}</math> is the ratio of ''off'' and ''on'' values of the limit resistances of the memristors, <math> \vec S </math> is the vector of the sources of the circuit and <math>\Omega</math> is a projector on the fundamental loops of the circuit. The constant <math>\beta</math> has the dimension of a voltage and is associated to the properties of the [[memristor]]; its physical origin is the charge mobility in the conductor. The diagonal matrix and vector <math>W=\operatorname{diag}(\vec W)</math> and <math>\vec W</math> respectively, are instead the internal value of the memristors, with values between 0 and 1. This equation thus requires adding extra constraints on the memory values in order to be reliable.
as a function of the properties of the physical memristive network and the external sources. In the equation above, <math>\alpha</math> is the "forgetting" time scale constant, <math> \xi=r-1</math> and <math>r=\frac{R_\text{off}}{R_\text{on}}</math> is the ratio of ''off'' and ''on'' values of the limit resistances of the memristors, <math> \vec S </math> is the vector of the sources of the circuit and <math>\Omega</math> is a projector on the fundamental loops of the circuit. The constant <math>\beta</math> has the dimension of a voltage and is associated to the properties of the [[memristor]]; its physical origin is the charge mobility in the conductor. The diagonal matrix and vector <math>W=\operatorname{diag}(\vec W)</math> and <math>\vec W</math> respectively, are instead the internal value of the memristors, with values between 0 and 1. This equation thus requires adding extra constraints on the memory values in order to be reliable.
<nowiki>as a function of the properties of the physical memristive network and the external sources. In the equation above, \alpha is the "forgetting" time scale constant, \xi=r-1 and r=\frac{R_\text{off}}{R_\text{on}} is the ratio of off and on values of the limit resistances of the memristors, \vec S is the vector of the sources of the circuit and \Omega is a projector on the fundamental loops of the circuit. The constant \beta has the dimension of a voltage and is associated to the properties of the memristor; its physical origin is the charge mobility in the conductor. The diagonal matrix and vector W=\operatorname{diag}(\vec W) and \vec W respectively, are instead the internal value of the memristors, with values between 0 and 1. This equation thus requires adding extra constraints on the memory values in order to be reliable.</nowiki>
Caravelli-Traversa-Di Ventra方程是描述物理记忆网络和外部源性质的函数。在上述方程中，<math>\alpha</math>是“遗忘”时间尺度常数，<math>\xi=r-1</math>，<math>r =\frac{R\text_{off}}{R_\text{on}}</math>是记忆电阻器off状态和on状态极限电阻值之比，<math>\vec S</math>是电路源的矢量，<math>\Omega</math>是电路基本环路的投影。常数<math>\beta</math>具有电压的量纲，与记忆电阻器的特性有关；其物理原型是导体中的电荷迁移率。对角矩阵和向量 <math>W=\operatorname{diag}(\vec W)</math>和<nowiki><math>\vec W<math></nowiki>'''<font color="#32CD32">是记忆电阻器的内阻</font>'''，值在0到1之间。因此，这个等式需要在'''<font color="32CD32">内存值</font>'''上添加额外约束以保证可靠性。
== See also==
==See also==
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*Telluride Neuromorphic Engineering Workshop
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*Computation and Neural Systems department at the California Institute of Technology.
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*打造硅脑: 基于生物神经元的计算机芯片可能有助于模拟更大、更复杂的大脑模型。2019年5月1日。SANDEEP RAVINDRAN
*打造硅脑: 基于生物神经元的计算机芯片可能有助于模拟更大、更复杂的大脑模型。2019年5月1日。SANDEEP RAVINDRAN.
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